MJD31C-13 by Diodes Incorporated Single Bipolar Transistors | Avnet Asia Pacific

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MJD31C-13

Trans GP BJT NPN 100V 3A 3-Pin(2+Tab) DPAK T/R

MJD31C-13 in Single Bipolar Transistors by Diodes Incorporated
Diodes Incorporated
Manufacturer: Diodes Incorporated
Avnet Manufacturer Part #: MJD31C-13
RoHS 10 Compliant

Trans GP BJT NPN 100V 3A 3-Pin(2+Tab) DPAK T/R

Key Features

  • BVCEO > 100V
  • IC = 3A high Continuous Collector Current
  • ICM = 5A Peak Pulse Current
  • Ideal for Power Switching or Amplification Applications
  • Complementary PNP Type: MJD32C
  • Totally Lead-Free & Fully RoHS compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability

Technical Attributes

Find Similar Parts
Description Value
DC Current Gain hFE Min 25
Continuous Collector Current 3
Collector Emitter Voltage Max 100
Transistor Case Style TO-252 (DPAK)
Transistor Polarity NPN
Transition Frequency 3
Operating Temperature Max 150 °C
No. of Pins 3
Transistor Mounting Surface Mount
Power Dissipation 15

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
SCHEDULE B: 8541210080
HTSN: 8541290095

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Documents

Title Download Type Date Published
DIO-DII_2221 PCN EOL-Documentation 20160109
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