Manufacturer:
onsemi
MJD117T4G
Darlington Transistor, PNP, 100 V, 20 W, 2 A, TO-252 (DPAK), 4 Pins
Avnet Manufacturer Part #:
MJD117T4G
RoHS 10 Exempt
The Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJD112 (NPN) and MJD117 (PNP) are complementary devices.
Key Features
- Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
- Straight Lead Version in Plastic Sleeves ("1" Suffix)
- Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
- Surface Mount Replacements for TIP110-TIP117 Series
- Monolithic Construction With Built-in Base-Emitter Shunt Resistors
- High DC Current GainhFE = 2500 (Typ) @ IC = 2.0 Adc
- Complementary Pairs Simplifies Designs
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- PbFree Packages are Available
Technical Attributes
Find Similar Parts|
|
Description | Value |
|---|---|---|
|
|
Collector Emitter Voltage Max | 100 |
|
|
DC Current Gain hFE Min | 1000 |
|
|
Power Dissipation | 20 |
|
|
Transistor Case Style | TO-252 (DPAK) |
|
|
Transistor Mounting | Surface Mount |
|
|
Transistor Polarity | PNP |
|
|
Continuous Collector Current | 2 |
|
|
No. of Pins | 3 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541290080 |
| HTSN: | 8541290095 |