IS66WV51216EBLL-55BLI-TR by ISSI SRAMs | Avnet Asia Pacific

Inactivity Warning Dialog

Your session is about to timeout due to inactivity. Click OK to extend your time for an additional 30 minutes.

IS66WV51216EBLL-55BLI-TR

PSRAM Async 8M-Bit 512K x 16 55ns 48-Pin TFBGA T/R

IS66WV51216EBLL-55BLI-TR in SRAMs by ISSI
ISSI
Manufacturer: ISSI
Product Category: Memory, SRAMs
Avnet Manufacturer Part #: IS66WV51216EBLL-55BLI-TR
RoHS 10 Compliant

The IS66WV51216EBLL are high-speed,8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected), the device assumes a standby mode at which the power dpation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory. A data byte allows Upper Byte (UB#) and Lower Byte (LB#) access. The IS66WV51216EBLL are packaged in the JEDEC standard 48-ball mini BGA (6mm x 8mm).

Key Features

  • High-Speed access time : - 60ns (IS66/67WV51216EBLL )
  • CMOS Lower Power Operation
  • Single Power Supply: Vdd =2.5V to 3.6V
  • Three State Outputs
  • Data Control for Upper and Lower bytes
  • Lead-free Available

Technical Attributes

Find Similar Parts
Description Value
No. of Pins 48
Supply Voltage Nom 3, 3.3 V
IC Mounting Surface Mount
IC Case / Package TFBGA
Memory Density 8 Mbit
Operating Temperature Max 85 °C
Operating Temperature Min -40 °C

ECCN / UNSPSC / COO

Description Value
ECCN: 3A991.b.1.a
SCHEDULE B: 8542320070
HTSN: 8542320071
CLEAR ALL Compare (0/10)