Inactivity Warning Dialog
The IS43LR32160C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 32-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS.
Key Features
|
Description | Value |
---|---|---|
|
DRAM Type | Mobile DDR SDRAM |
|
Clock Frequency Max | 166 MHz |
|
IC Mounting | Surface Mount |
|
Memory Density | 512 Mbit |
|
Supply Voltage Nom | 1.8 V |
|
Operating Temperature Max | 85 °C |
|
Operating Temperature Min | -40 °C |
|
Memory Configuration | 16M x 32 |
|
No. of Pins | 90 |
|
IC Case / Package | TFBGA |
Description | Value |
---|---|
ECCN: | EAR99 |
SCHEDULE B: | 8542320015 |
HTSN: | 8542320028 |