IS43LR32160C-6BLI by ISSI DRAMs | Avnet Asia Pacific

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IS43LR32160C-6BLI

DRAM Chip Mobile DDR SDRAM 512M-Bit 16M x 32 1.8V 90-Pin TFBGA

IS43LR32160C-6BLI in DRAMs by ISSI
ISSI
Manufacturer: ISSI
Product Category: Memory, DRAMs
Avnet Manufacturer Part #: IS43LR32160C-6BLI
RoHS 6 Compliant

The IS43LR32160C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 32-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS.

Key Features

  • JEDEC standard 1.8V power supply
  • VDD = 1.8V, VDDQ = 1.8V
  • Four internal banks for concurrent operation
  • MRS cycle with address key programs
    • CAS latency 2, 3 (clock)
    • Burst length (2, 4, 8, 16)
    • Burst type (sequential & interleave)
  • Fully differential clock inputs (CK, /CK)
  • All inputs except data & DM are sampled at the rising edge of the system clock
  • Data I/O transaction on both edges of data strobe
  • Bidirectional data strobe per byte of data (DQS)
  • DM for write masking only
  • Edge aligned data & data strobe output
  • Center aligned data & data strobe input
  • 64ms refresh period (8K cycle)
  • Auto & self refresh
  • Concurrent Auto Precharge
  • Maximum clock frequency up to 200MHZ
  • Maximum data rate up to 400Mbps/pin
  • Power Saving support
    • PASR (Partial Array Self Refresh)
    • Auto TCSR (Temperature Compensated Self Refresh)
    • Deep Power Down Mode
  • Status Register Read (SRR)
  • LVCMOS compatible inputs/outputs
  • Packages:
    • 90-Ball BGA
    • 152-Ball PoP BGA

Technical Attributes

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Description Value
DRAM Type Mobile DDR SDRAM
Clock Frequency Max 166 MHz
IC Mounting Surface Mount
Memory Density 512 Mbit
Supply Voltage Nom 1.8 V
Operating Temperature Max 85 °C
Operating Temperature Min -40 °C
Memory Configuration 16M x 32
No. of Pins 90
IC Case / Package TFBGA

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
SCHEDULE B: 8542320015
HTSN: 8542320028
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