Manufacturer:
ISSI
IS43LR16800G-6BLI
DRAM Chip Mobile DDR SDRAM 128M-Bit 8Mx16 1.8V 60-Pin TFBGA
Avnet Manufacturer Part #:
IS43LR16800G-6BLI
RoHS 10 Compliant
The IS43LR168G is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS.
Key Features
- JEDEC standard 1.8V power supply.
- VDD = 1.8V, VDDQ = 1.8V
- Four internal banks for concurrent operation
- MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave)
- Fully differential clock inputs (CK, /CK)
- All inputs except data & DM are sampled at the rising edge of the system clock
- Data I/O transaction on both edges of data strobe
- Bidirectional data strobe per byte of data (DQS)
- DM for write masking only
- Edge aligned data & data strobe output
- Center aligned data & data strobe input
- 64ms refresh period (4K cycle)
- Auto & self refresh
- Concurrent Auto Precharge
- Maximum clock frequency up to 200MHZ
- Maximum data rate up to 400Mbps/pin
- Power Saving support
- PASR (Partial Array Self Refresh)
- Auto TCSR (Temperature Compensated Self Refresh)
- Deep Power Down Mode
- Programmable Driver Strength Control by Full Strength or ¾, ½, ¼ , ⅛ of Full Strength
- LVCMOS compatible inputs/outputs
- 60-Ball FBGA package
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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DRAM Type | Mobile DDR SDRAM |
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IC Mounting | Surface Mount |
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No. of Pins | 60 |
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Memory Configuration | 8M x 16 |
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Supply Voltage Nom | 1.8 V |
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Operating Temperature Max | 85 °C |
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Operating Temperature Min | -40 °C |
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Memory Density | 128 Mbit |
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Clock Frequency Max | 166 MHz |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | PARTS... |
| HTSN: | PARTS... |