Manufacturer:
onsemi
HUF75344G3
Trans MOSFET N-CH 55V 75A 3-Pin(3+Tab) TO-247 Rail
Avnet Manufacturer Part #:
HUF75344G3
RoHS 10 Exempt
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75344.
Key Features
- 75A, 55V
- Simulation Models
- Temperature Compensated PSPICE® and SABER™ Models
- Thermal Impedance PSPICE and SABER Models
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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Operating Temperature Max | 175 |
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Transistor Case Style | TO-247 |
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Rds(on) Test Voltage | 10 |
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Channel Type | N |
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Continuous Drain Current Id | 75 |
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Power Dissipation | 285 |
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No. of Pins | 3 |
|
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Drain Source Voltage Vds | 55 |
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Drain Source On State Resistance | 8 |
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Transistor Mounting | Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541290080 |
| HTSN: | 8541290095 |
Documents
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Documents
| Title | Download | Type | Date Published |
|---|---|---|---|
| Change TO247 mold downset A1 remark position from lead tip to lead root. | Errata-Sheets | 20200106 | |
| HUF75344G3 TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB | Part-Block-Diagram | 20010305 |