Manufacturer:
onsemi
FQD3P50TM
Trans MOSFET P-CH 500V 2.1A 3-Pin(2+Tab) DPAK T/R
Avnet Manufacturer Part #:
FQD3P50TM
RoHS 10 Exempt
This P-Channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Key Features
- -2.1A, -500V, RDS(on) = 4.9Ω(Max.) @VGS = 10 V, ID = -1.05A
- Low gate charge ( Typ. 18nC)
- Low Crss ( Typ. 9.5pF)
- 100% avalanche tested
Technical Attributes
Find Similar Parts|
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Description | Value |
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Transistor Mounting | Surface Mount |
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Continuous Drain Current Id | 2.1 A |
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Transistor Case Style | TO-252 (DPAK) |
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Operating Temperature Max | 150 °C |
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Channel Type | P Channel |
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Rds(on) Test Voltage | 10 |
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Drain Source On State Resistance | 4.9 Ohm |
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Gate Source Threshold Voltage Max | 5 V |
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MSL Level | MSL 1 - Unlimited |
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Product Range | QFET Series |
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Drain Source Voltage Vds | 500 V |
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Power Dissipation | 50 W |
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No. of Pins | 3 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541290080 |
| HTSN: | 8541290095 |
Documents
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Documents
| Title | Download | Type | Date Published |
|---|---|---|---|
| FQD3P50TM TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | Part-Block-Diagram | 20150510 |