Manufacturer:
onsemi
FQD2N60CTM
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
Avnet Manufacturer Part #:
FQD2N60CTM
RoHS 10 Exempt
This N-Channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Key Features
- 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A
- Low Gate Charge (Typ. 18 nC)
- Low Crss (Typ. 18 pF)
- 100% Avalanche Tested
- RoHS Compliant
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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Operating Temperature Max | 150 |
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Power Dissipation | 44 |
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Drain Source On State Resistance | 4.7 |
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Transistor Mounting | Surface Mount |
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No. of Pins | 3 |
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Drain Source Voltage Vds | 600 |
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Transistor Case Style | TO-252 (DPAK) |
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Continuous Drain Current Id | 1.9 |
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Channel Type | N |
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MSL Level | MSL 1 - Unlimited |
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Rds(on) Test Voltage | 10 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541290080 |
| HTSN: | 8541290095 |
Documents
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Documents
| Title | Download | Type | Date Published |
|---|---|---|---|
| FQD2N60CTM TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | Part-Block-Diagram | 20031103 |