Manufacturer:
onsemi
FQB55N10TM
Power MOSFET, N Channel, 100 V, 55 A, 0.021 ohm, TO-263 (D2PAK), Surface Mount
Avnet Manufacturer Part #:
FQB55N10TM
RoHS Non-Compliant
This N-Channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Key Features
- 55A, 100V, RDS(on) = 26mΩ(Max.) @VGS = 10 V, ID = 27.5A
- Low gate charge ( Typ. 75nC)
- Low Crss ( Typ. 130pF)
- 100% avalanche tested
- 175°C maximum junction temperature rating
Technical Attributes
Find Similar Parts|
|
Description | Value |
|---|---|---|
|
|
Rds(on) Test Voltage | 10 |
|
|
No. of Pins | 3 |
|
|
Channel Type | N |
|
|
MSL Level | MSL 1 - Unlimited |
|
|
Power Dissipation | 155 |
|
|
Drain Source On State Resistance | 26 |
|
|
Continuous Drain Current Id | 55 |
|
|
Transistor Case Style | TO-263 (D2PAK) |
|
|
Drain Source Voltage Vds | 100 |
|
|
Transistor Mounting | Surface Mount |
|
|
Operating Temperature Max | 175 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541290080 |
| HTSN: | 8541290095 |
Documents
Please log in to view more information.
Documents
| Title | Download | Type | Date Published |
|---|---|---|---|
| FQB55N10TM 2LD,TO263, SURFACE MOUNT | Part-Block-Diagram | 20000927 |