Manufacturer:
onsemi
FOD817D3SD
Optocoupler Single DC-OUT 5kVrms 4-Pin SMD PDIP T/R
Avnet Manufacturer Part #:
FOD817D3SD
RoHS 10 Compliant
The FOD817 is a 4-Pin DIP Phototransistor Output Optocoupler The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
Key Features
- Compact 4-pin DIP package
- Current transfer ratio in selected groups: FOD817: 50-600%
- Minimum BVCEO of 70V guaranteed
- Safety and Regulatory Approvals
- UL1577, 5,000 VACRMS for 1 Minute
- DIN EN/IEC60747-5-5
Technical Attributes
Find Similar Parts|
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Description | Value |
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Maximum Collector Emitter Saturation Voltage | 200 mV |
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Lead Finish | Matte Tin |
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Maximum Power Dissipation | 200 mW |
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Maximum Fall Time | 18 us |
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Maximum Rise Time | 18 us |
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MSL Level | 1 |
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Product Dimensions | 4.6 x 6.5 x 3.5 mm |
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Reverse Voltage | 6 V |
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Minimum Isolation Voltage | 5000 Vrms |
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Supplier Package | SMD PDIP |
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Input Current | 50 mA |
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Channel Type | N |
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Maximum Collector Current | 50 mA |
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Max Processing Temp | 260 °C |
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Input Type | DC |
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Mounting | Surface Mount |
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Maximum Current Transfer Ratio @ Current | 600@5mA % |
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Typical Rise Time | 4 us |
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Operating Temperature | -55 to 110 to 110 °C |
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Series Name | FOD817 |
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Maximum Collector Emitter Voltage | 70 V |
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Output Type | DC |
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Number of Channels per Chip | 1 |
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Fall Time | 3 us |
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Forward Voltage | 1.2 V |
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Pin Count | 4 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541408000 |
| HTSN: | 8541408000 |
Documents
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Documents
| Title | Download | Type | Date Published |
|---|---|---|---|
| FOD817D3SD 4LD,MDIP,.300"WIDE,SURFACE MOUNT FORM | Part-Block-Diagram | 20040526 |