Manufacturer:
onsemi
FDMC86102LZ
Power MOSFET, N Channel, 100 V, 22 A, 24 Milliohms, Power 33, 8 Pins, Surface Mount
Avnet Manufacturer Part #:
FDMC86102LZ
RoHS 10 Compliant
FDMC86102LZ is a 100V, 24mohm, 22A N-channel, shielded gate, POWERTRENCH® MOSFET. This N-channel logic Level MOSFETs are produced using advanced POWERTRENCH® process that incorporates shielded gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G−S zener has been added to enhance ESD voltage level. Typical applications include DC to DC switching.
Key Features
- Shielded gate MOSFET technology
- Max RDS(on) = 24mohm at VGS = 10V, ID = 6.5A
- Max RDS(on) = 35mohm at VGS = 4.5V, ID = 5.5A
- HBM ESD protection level > 6KV typical
- 100% UIL tested
Technical Attributes
Find Similar Parts|
|
Description | Value |
|---|---|---|
|
|
MSL Level | MSL 1 - Unlimited |
|
|
Rds(on) Test Voltage | 10 |
|
|
Operating Temperature Max | 150 |
|
|
Transistor Mounting | Surface Mount |
|
|
Gate Source Threshold Voltage Max | 2.2 V |
|
|
Drain Source Voltage Vds | 100 V |
|
|
No. of Pins | 8 |
|
|
Product Range | PowerTrench Series |
|
|
Continuous Drain Current Id | 22 A |
|
|
Power Dissipation | 41 W |
|
|
Drain Source On State Resistance | 24 mOhm |
|
|
Channel Type | N |
|
|
Transistor Case Style | Power 33 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541290080 |
| HTSN: | 8541290095 |
Documents
Please log in to view more information.
Documents
| Title | Download | Type | Date Published |
|---|---|---|---|
| FDMC86102LZ 8LD,MLP,DUAL, 3.3MM SQUARE | Part-Block-Diagram | 20110512 | |
| FAI-P666AAB PCN | Other-Documents | 20160109 |