Manufacturer:
onsemi
FDG6335N
Dual MOSFET, N Channel, 20 V, 20 V, 700 mA, 700 mA, 0.18 ohm
Avnet Manufacturer Part #:
FDG6335N
RoHS 10 Compliant
NCNR
Obsolete
The FDG6335N is a PowerTrench® dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS (ON) and gate charge (QG) in a small package. It is suitable for use with DC-to-DC converters and load switch applications.
Key Features
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- Compact industry standard surface-mount-package
- ±12V Gate to source voltage
- 0.7A Continuous drain current
- 2.1A Pulsed drain current
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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Operating Temperature Max | 150 |
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Transistor Case Style | SOT-363 |
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Power Dissipation N Channel | 300 |
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Continuous Drain Current Id N Channel | 0.7 |
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Drain Source On State Resistance N Channel | 300 |
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No. of Pins | 6 |
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MSL Level | MSL 1 - Unlimited |
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Channel Type | Dual N |
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Drain Source Voltage Vds N Channel | 20 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541210080 |
| HTSN: | 8541210095 |
Documents
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Documents
| Title | Download | Type | Date Published |
|---|---|---|---|
| FDG6335N 6LD,SC70,EIAJ SC-88,1.25MM WIDE | Part-Block-Diagram | 20011101 |