Manufacturer:
Diodes Incorporated
DMN63D8LDW-13
Transistor MOSFET Array Dual N-CH 30V 260mA 6-Pin SOT-363 T/R
Avnet Manufacturer Part #:
DMN63D8LDW-13
RoHS 10 Compliant
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Key Features
- Dual N-Channel MOSFET
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Small Surface Mount Package
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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Operating Temperature Max | 150 |
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No. of Pins | 6 |
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Power Dissipation N Channel | 300 |
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Continuous Drain Current Id N Channel | 260 |
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Drain Source Voltage Vds N Channel | 30 |
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Transistor Case Style | SOT-363 |
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MSL Level | MSL 1 - Unlimited |
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Channel Type | Dual N |
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Drain Source On State Resistance N Channel | 2.8 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541210080 |
| HTSN: | 8541210095 |