DMN2990UDJ-7 by Diodes Incorporated MOSFET Arrays | Avnet Asia Pacific

Inactivity Warning Dialog

Your session is about to timeout due to inactivity. Click OK to extend your time for an additional 30 minutes.

DMN2990UDJ-7

Dual MOSFET, N Channel, 20 V, 20 V, 450 mA, 450 mA, 0.6 ohm

DMN2990UDJ-7 in MOSFET Arrays by Diodes Incorporated
Diodes Incorporated
Manufacturer: Diodes Incorporated
Product Category: Discretes, FETs, MOSFET Arrays
Avnet Manufacturer Part #: DMN2990UDJ-7
RoHS 10 Compliant

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Very low Gate Threshold Voltage, 1.0V max
  • Low Input Capacitance
  • Fast Switching Speed
  • Ultra-Small Surface Mount Package 1mm x 1mm
  • Low Package Profile, 0.45mm Maximum Package height
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 standards for High Reliability

Technical Attributes

Find Similar Parts
Description Value
Operating Temperature Max 150
MSL Level MSL 1 - Unlimited
Channel Type Dual N
Power Dissipation N Channel 350
Transistor Case Style SOT-963
Drain Source Voltage Vds N Channel 20
No. of Pins 6
Drain Source On State Resistance N Channel 990
Continuous Drain Current Id N Channel 450

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
SCHEDULE B: PARTS...
HTSN: PARTS...
CLEAR ALL Compare (0/10)