DMN2250UFB-7B by Diodes Incorporated Single MOSFETs | Avnet Asia Pacific

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DMN2250UFB-7B

Power MOSFET, N Channel, 20 V, 1.35 A, 0.17 ohm, X1-DFN1006, Surface Mount

DMN2250UFB-7B in Single MOSFETs by Diodes Incorporated
Diodes Incorporated
Manufacturer: Diodes Incorporated
Product Category: Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: DMN2250UFB-7B
RoHS 10 Compliant

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

  • Low On-Resistance
  • Very Low Gate Threshold Voltage VGS(TH), 1.0V max
  • Low Input Capacitance
  • Fast Switching Speed
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability

Technical Attributes

Find Similar Parts
Description Value
MSL Level MSL 1 - Unlimited
Operating Temperature Max 150
Rds(on) Test Voltage 4.5
Continuous Drain Current Id 1.35
Transistor Case Style X1-DFN1006
Power Dissipation 500
Drain Source Voltage Vds 20
Transistor Mounting Surface Mount
No. of Pins 3
Drain Source On State Resistance 170
Channel Type N

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
SCHEDULE B: 8541100050
HTSN: 8541210095
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