DMMT5401-7-F by Diodes Incorporated Bipolar Transistor Arrays | Avnet Asia Pacific

Inactivity Warning Dialog

Your session is about to timeout due to inactivity. Click OK to extend your time for an additional 30 minutes.

DMMT5401-7-F

Trans GP BJT PNP 150V 0.2A 6-Pin SOT-26 T/R

DMMT5401-7-F in Bipolar Transistor Arrays by Diodes Incorporated
Diodes Incorporated
Manufacturer: Diodes Incorporated
Avnet Manufacturer Part #: DMMT5401-7-F
RoHS 10 Compliant

Trans GP BJT PNP 150V 0.2A 6-Pin SOT-26 T/R

Key Features

  • Epitaxial Planar Die Construction
  • Complementary NPN Type Available (DMMT5551)
  • Ideal for Low Power Amplification and Switching
  • Intrinsically Matched PNP Pair
  • 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)
  • Lead Free/RoHS Compliant
  • "Green" Device

Technical Attributes

Find Similar Parts
Description Value
Operating Temperature Max 150
Transition Frequency PNP 300
Power Dissipation PNP 300
DC Current Gain hFE Min PNP 60
Continuous Collector Current PNP 200
Transistor Mounting Surface Mount
No. of Pins 6
Collector Emitter Voltage PNP Max 150
Transistor Case Style SOT-26
MSL Level MSL 1 - Unlimited
Transistor Polarity Dual PNP

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
SCHEDULE B: PARTS...
HTSN: PARTS...
CLEAR ALL Compare (0/10)