DMHC4035LSDQ-13 by Diodes Incorporated MOSFET Arrays | Avnet Asia Pacific

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DMHC4035LSDQ-13

MOSFET Array, Complementary Dual N and Dual P Channel, 40 V, 4.5 A, 3.7 A, 45 Milliohms, 65 Milliohms, SOIC, 8 Pins

DMHC4035LSDQ-13 in MOSFET Arrays by Diodes Incorporated
Diodes Incorporated
Manufacturer: Diodes Incorporated
Product Category: Discretes, FETs, MOSFET Arrays
Avnet Manufacturer Part #: DMHC4035LSDQ-13
RoHS 10 Compliant

DMHC4035LSDQ-13 is a 40V complementary enhancement mode MOSFET H-bridge features 2 N and 2 P channels in an SO-8 package. Qualified to AEC-Q101 the H bridge is ideally suited to driving solenoids, DC motors and audio outputs.

Key Features

  • Drain-source voltage is 40V, gate-source voltage is ±20V
  • Pulsed drain current is 25A
  • Low on-resistance
  • Low input capacitance
  • Fast switching speed
  • Qualified to AEC-Q101 standards for high reliability
  • PPAP capable
  • Total power dissipation is 5W

Technical Attributes

Find Similar Parts
Description Value
Continuous Drain Current Id N Channel 4.5 A
No. of Pins 8
Operating Temperature Max 150
Transistor Case Style SOIC
Drain Source Voltage Vds N Channel 40 V
Channel Type Complementary Dual N and Dual P Channel
Drain Source On State Resistance N Channel 45 mOhm
Drain Source On State Resistance P Channel 65 mOhm
Drain Source Voltage Vds P Channel 40 V
Power Dissipation N Channel 1.5 W
Continuous Drain Current Id P Channel 3.7 A
Power Dissipation P Channel 1.5 W

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
SCHEDULE B: 8541100050
HTSN: 8541290095
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