Manufacturer:
Diodes Incorporated
DMG1016V-7
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 870 mA, 870 mA, 0.3 ohm
Avnet Manufacturer Part #:
DMG1016V-7
RoHS 10 Compliant
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 870 mA, 870 mA, 0.3 ohm
Key Features
- Low On-Resistance
- Low Gate Threshold Voltage VGS(th) <1V
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Complementary Pair MOSFET
- Ultra-Small Surface Mount Package
- Lead Free/RoHS Compliant
- ESD Protected Gate to 2.5kV HBM
- "Green" Device
- Qualified to AEC-Q101 Standards for High Reliability
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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MSL Level | MSL 1 - Unlimited |
|
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Drain Source On State Resistance N Channel | 400 |
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Drain Source On State Resistance P Channel | 700 |
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Power Dissipation N Channel | 530 |
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Continuous Drain Current Id P Channel | 0.64 |
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Drain Source Voltage Vds P Channel | 20 |
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Drain Source Voltage Vds N Channel | 20 |
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Transistor Case Style | SOT-563 |
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No. of Pins | 6 |
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Operating Temperature Max | 150 |
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Channel Type | Dual N|P |
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Continuous Drain Current Id N Channel | 0.87 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541210080 |
| HTSN: | 8541210095 |
Documents
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Documents
| Title | Download | Type | Date Published |
|---|---|---|---|
| Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products | PCN-Documentation | 20191004 |