Manufacturer:
onsemi
BDX53CG
Darlington Transistor, Dual NPN, 100 V, 8 A, 65 W, 750 hFE, TO-220, 3 Pins
Avnet Manufacturer Part #:
BDX53CG
RoHS 10 Exempt
The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.
Key Features
- High DC Current GainhFE = 2500 (Typ) @ IC = 4.0 Adc
- Collector Emitter Sustaining Voltage@ 100 mAdc
VCEO(sus) = 100 Vdc (Min) - Low Collector-Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc - Monolithic Construction with Built-In Base-Emitter Shunt Resistors
- TO-220AB Compact Package
- These Devices are Pb−Free and are RoHS Compliant
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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Power Dissipation | 65 W |
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No. of Pins | 3 |
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Transistor Mounting | Through Hole |
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Transistor Polarity | NPN |
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Continuous Collector Current | 8 A |
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Operating Temperature Max | 150 °C |
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DC Current Gain hFE Min | 750 |
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Collector Emitter Voltage Max | 100 V |
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Transistor Case Style | TO-220 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | PARTS... |
| HTSN: | PARTS... |