BC848CPDW1T1G by onsemi Bipolar Transistor Arrays | Avnet Asia Pacific

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BC848CPDW1T1G

Trans GP BJT NPN/PNP 30V 0.1A 6-Pin SOT-363 T/R

BC848CPDW1T1G in Bipolar Transistor Arrays by onsemi
onsemi
Manufacturer: onsemi
Avnet Manufacturer Part #: BC848CPDW1T1G
RoHS 10 Compliant

The Dual NPN PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is designed for low power surface mount applications.

Key Features

  • Collector − Emitter Breakdown Voltage 30 V
  • Pb−Free Devices are available

Technical Attributes

Find Similar Parts
Description Value
Transistor Case Style SOT-363
Collector Emitter Voltage NPN Max 30
Continuous Collector Current PNP 100
Continuous Collector Current NPN 100
Transition Frequency NPN 100
Power Dissipation NPN 380
Transistor Polarity Complementary, PNP
Transistor Mounting Surface Mount
No. of Pins 6
DC Current Gain hFE Min PNP 420
Operating Temperature Max 150 °C
Product Range BC848CPDW1 Ser
DC Current Gain hFE Min NPN 420
Collector Emitter Voltage PNP Max 30
Transition Frequency PNP 100

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
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