BC848CPDW1T1G by onsemi Bipolar Transistor Arrays | Avnet Asia Pacific

Inactivity Warning Dialog

Your session is about to timeout due to inactivity. Click OK to extend your time for an additional 30 minutes.

BC848CPDW1T1G

Trans GP BJT NPN/PNP 30V 0.1A 6-Pin SOT-363 T/R

BC848CPDW1T1G in Bipolar Transistor Arrays by onsemi
onsemi
Manufacturer: onsemi
Avnet Manufacturer Part #: BC848CPDW1T1G
RoHS 10 Compliant

The Dual NPN PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is designed for low power surface mount applications.

Key Features

  • Collector − Emitter Breakdown Voltage 30 V
  • Pb−Free Devices are available

Technical Attributes

Find Similar Parts
Description Value
Continuous Collector Current PNP 100
Product Range BC848CPDW1 Ser
Transition Frequency NPN 100
Power Dissipation NPN 380
Transistor Mounting Surface Mount
No. of Pins 6
DC Current Gain hFE Min PNP 420
Operating Temperature Max 150 °C
Continuous Collector Current NPN 100
Transistor Case Style SOT-363
Transition Frequency PNP 100
Collector Emitter Voltage PNP Max 30
Collector Emitter Voltage NPN Max 30
DC Current Gain hFE Min NPN 420
Transistor Polarity Complementary, PNP

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
SCHEDULE B: PARTS...
HTSN: PARTS...
CLEAR ALL Compare (0/10)