BC847BV115 by Nexperia Bipolar Transistor Arrays | Avnet Asia Pacific

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BC847BV115

Trans GP BJT NPN 45V 0.1A 6-Pin SOT-666 T/R

BC847BV115 in Bipolar Transistor Arrays by Nexperia
Nexperia
Manufacturer: Nexperia
Avnet Manufacturer Part #: BC847BV,115
RoHS 6 Compliant

NPN double transistor in a SOT666 plastic package. PNP complement: BC857BV.

Key Features

  • 300 mW total power dissipation
  • Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package
  • Excellent coplanarity due to straight leads
  • Low collector capacitance
  • Improved thermal behaviour due to flat leads
  • Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors
  • Reduces required board space
  • Reduces pick and place costs.
  • AEC-Q101 qualified

Technical Attributes

Find Similar Parts
Description Value
Operating Temperature Max 150
Transistor Case Style SOT-666
Transition Frequency NPN 100
Continuous Collector Current NPN 100
DC Current Gain hFE Min NPN 200
MSL Level MSL 1 - Unlimited
Transistor Mounting Surface Mount
Transistor Polarity Dual NPN
No. of Pins 6
Power Dissipation NPN 300
Collector Emitter Voltage NPN Max 45

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
SCHEDULE B: 8541210080
HTSN: 8541210095
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