2SC5200N(S1ES) by Toshiba Single Bipolar Transistors | Avnet Asia Pacific

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2SC5200N(S1ES)

Trans GP BJT NPN 230V 15A 3-Pin TO-3P(N)

2SC5200N(S1ES) in Single Bipolar Transistors by Toshiba
Toshiba
Manufacturer: Toshiba
Avnet Manufacturer Part #: 2SC5200N(S1,E,S)
RoHS 6 Compliant

Trans GP BJT NPN 230V 15A 3-Pin TO-3P(N)

Key Features

  • High collector voltage: Vceo = 230 V (min)
  • Complementary to 2SA1943N
  • Recommended for 100-W high-fidelity audio frequency amplifier output stage

Technical Attributes

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Description Value
Operating Temperature Max 150
Transistor Polarity NPN
Power Dissipation 150
No. of Pins 3
Collector Emitter Voltage Max 230
DC Current Gain hFE Min 80
Continuous Collector Current 15
Transistor Case Style TO-3P
Transition Frequency 30
Transistor Mounting Through Hole

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
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