2SA2016-TD-E by onsemi Single Bipolar Transistors | Avnet Asia Pacific

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2SA2016-TD-E

Trans GP BJT PNP 50V 7A 4-Pin(3+Tab) PCP T/R

2SA2016-TD-E in Single Bipolar Transistors by onsemi
onsemi
Manufacturer: onsemi
Avnet Manufacturer Part #: 2SA2016-TD-E
RoHS 10 Exempt

2SA2016 is a Bipolar Transistor, -50V, -7A, Low VCE(sat), (PNP)NPN Single PCP for DC-DC Converter Applications.

Key Features

  • Adoption of FBET and MBIT processes
  • Large current capacity
  • Low collector-to-emitter saturation voltage
  • High-speed switching
  • Ultrasmall package facilitales miniaturization in end products
  • High allowable power dissipation

Technical Attributes

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Description Value
Transistor Mounting Surface Mount
No. of Pins 4
Transistor Polarity PNP
DC Current Gain hFE Min 200
Transistor Case Style SOT-89
Operating Temperature Max 150 °C
Continuous Collector Current 7
Power Dissipation 3.5
Transition Frequency 290
Collector Emitter Voltage Max 50

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
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