Manufacturer:
Nexperia
2N7002P215
Power MOSFET, N Channel, 60 V, 360 mA, 1.6 Ohm, SOT-23 (TO-236AB), 3 Pins, Surface Mount
Avnet Manufacturer Part #:
2N7002P,215
RoHS 10 Compliant
Star
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Key Features
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
- AEC-Q101 qualified
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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Drain Source Voltage Vds | 60 V |
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No. of Pins | 3 |
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Gate Source Threshold Voltage Max | 2.4 V |
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Transistor Case Style | SOT-23 (TO-236AB) |
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Channel Type | N Channel |
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Transistor Mounting | Surface Mount |
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Qualification | AEC-Q101 |
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Continuous Drain Current Id | 360 mA |
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Drain Source On State Resistance | 1.6 Ohm |
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Rds(on) Test Voltage | 10 |
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Power Dissipation | 420 mW |
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Operating Temperature Max | 150 °C |
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MSL Level | MSL 1 - Unlimited |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541290080 |
| HTSN: | 8541290095 |
Documents
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Documents
| Title | Download | Type | Date Published |
|---|---|---|---|
| 2N7002,215 datasheet | Product-Guides | 20180914 |