SIS407ADN-T1-GE3 by Vishay Single MOSFETs | Avnet Asia Pacific

Inactivity Warning Dialog

Your session is about to timeout due to inactivity. Click OK to extend your time for an additional 30 minutes.

SIS407ADN-T1-GE3

Power MOSFET, P Channel, 20 V, 18 A, 9 mOhm, PowerPAK 1212, 8 Pins, Surface Mount

SIS407ADN-T1-GE3 in Single MOSFETs by Vishay
Vishay
Manufacturer: Vishay
Product Category: Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: SIS407ADN-T1-GE3
RoHS 10 Compliant

Power MOSFET, P Channel, 20 V, 18 A, 9 mOhm, PowerPAK 1212, 8 Pins, Surface Mount

Key Features

  • TrenchFET® power MOSFET
  • Low thermal resistance PowerPAK® package
  • 100 % Rg and UIS tested

Technical Attributes

Find Similar Parts
Description Value
Rds(on) Test Voltage 4.5
Transistor Mounting Surface Mount
No. of Pins 8
Channel Type P Channel
Operating Temperature Max 150 °C
Transistor Case Style PowerPAK 1212
MSL Level MSL 1 - Unlimited
Continuous Drain Current Id 18 A
Gate Source Threshold Voltage Max 1 V
Drain Source Voltage Vds 20 V
Drain Source On State Resistance 9 mOhm
Power Dissipation 39.1 W
Product Range TrenchFET Series

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
SCHEDULE B: PARTS...
HTSN: PARTS...
CLEAR ALL Compare (0/10)