SIRA04DP-T1-GE3 by Vishay Single MOSFETs | Avnet Asia Pacific

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SIRA04DP-T1-GE3

N-CHANNEL 30-V (D-S) MOSFET

SIRA04DP-T1-GE3 in Single MOSFETs by Vishay
Vishay
Manufacturer: Vishay
Product Category: Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: SIRA04DP-T1-GE3
RoHS 10 Exempt

N-CHANNEL 30-V (D-S) MOSFET

Key Features

  • TrenchFET® Gen IV Power MOSFET
  • 100 % Rg and UIS Tested

Technical Attributes

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Description Value
Power Dissipation 62.5
Transistor Case Style PowerPAK SO
Drain Source On State Resistance 2.15
Transistor Mounting Surface Mount
Channel Type N Channel
No. of Pins 8
Rds(on) Test Voltage 10
Continuous Drain Current Id 40
Drain Source Voltage Vds 30
Gate Source Threshold Voltage Max 2.2
Operating Temperature Max 150 °C

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
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