Inactivity Warning Dialog
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
Key Features
|
Description | Value |
---|---|---|
|
Transistor Case Style | TO-220FP |
|
Continuous Drain Current Id | 4.1 |
|
Rds(on) Test Voltage | 10 |
|
Drain Source On State Resistance | 1 |
|
Gate Source Threshold Voltage Max | 4 |
|
Drain Source Voltage Vds | 250 |
|
No. of Pins | 3 |
|
Power Dissipation | 35 |
|
Operating Temperature Max | 150 °C |
|
Channel Type | P Channel |
|
Transistor Mounting | Through Hole |
Description | Value |
---|---|
ECCN: | EAR99 |
SCHEDULE B: | PARTS... |
HTSN: | PARTS... |
Documents
Title | Download | Type | Date Published |
---|---|---|---|
retraction as all parts are still available and active | EOL-Documentation | 20201030 | |
POD UPDATE RELATED TO PCN SIL-0092017 | PCN-Documentation | 20190320 | |
ADVISORY IS BEING PROVIDED TO YOU AS AN ANNOUNCEMENT THAT WHEN THE SUBJECT PCN WAS ISSUED ON JULY 18, 2017 FOR ADDITIONAL COMMERCIAL POWER MOSFET MANUFACTURING CAPACITY AT GEM ELECTRONICS FOR VISHAY’S TO-220 FULL-PACK PACKAGE, THE DOCUMENT DID NOT ARTICULATE SOME OF THE DIFFERENCES FOR THE DIMENSIONS AS THE GEM VERSION OF THE PACKAGE IS SLIGHTLY DIFFERENT. | PCN-Documentation | 20190320 |