Manufacturer:
Vishay
IRFBE30PBF
Power MOSFET, N Channel, 800 V, 4.1 A, 3 Ohm, TO-220AB, 3 Pins, Through Hole
Avnet Manufacturer Part #:
IRFBE30PBF
RoHS 10 Exempt
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry
Key Features
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
- Drain-Source Voltage Vds limits to 800 V
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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Transistor Mounting | Through Hole |
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Operating Temperature Max | 150 °C |
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Transistor Case Style | TO-220AB |
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Rds(on) Test Voltage | 10 |
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Drain Source On State Resistance | 3 Ohm |
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Power Dissipation | 125 W |
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Channel Type | N Channel |
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No. of Pins | 3 |
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Continuous Drain Current Id | 4.1 A |
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Product Range | IRFBE30 Series |
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Drain Source Voltage Vds | 800 V |
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Gate Source Threshold Voltage Max | 4 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | PARTS... |
| HTSN: | PARTS... |
Documents
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Documents
| Title | Download | Type | Date Published |
|---|---|---|---|
| retraction as all parts are still available and active | EOL-Documentation | 20201030 |