Manufacturer:
Toshiba
Inactivity Warning Dialog
The TLP250H is a photocoupler in a DIP8 package that consists of a GaAlAs infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photo detector IC chip. It provides guaranteed performance and specifications at temperatures up to 125 °C. The TLP250H has an internal Faraday shield that provides a guaranteed Common-mode transient immunity of ±40 kV/ µs. It has a totem-pole output that can both sink and source current. The TLP250H is ideal for IGBT and power MOSFET gate drive.
Key Features
|
Description | Value |
---|---|---|
|
Typical Fall Time | 0.05 us |
|
Maximum Rise Time | 50 ns |
|
Maximum Power Dissipation | 260 mW |
|
Input Type | DC |
|
Pin Count | 8 |
|
Supplier Package | DIP |
|
Maximum Forward Current | 20 mA |
|
Max Processing Temp | 260 °C |
|
Peak Output Current | 2.5 A |
|
Minimum Isolation Voltage | 3750 Vrms |
|
Mounting | Through Hole |
|
Reverse Voltage | 6 V |
|
Peak Forward Voltage | 1.8 V |
|
Number of Channels per Chip | 1 |
|
Output Device | IGBT|MOSFET |
|
Operating Temperature | -40 to 125 to 125 °C |
|
Screening Level | Extended Industrial |
|
Maximum Fall Time | 50 ns |
|
Maximum Low Level Output Current | 2 A |
|
Maximum Propagation Delay Time | 500 ns |
|
Product Dimensions | 9.66 x 6.4 x 3.65 mm |
|
Input Current | 10 mA |
|
Output Type | Totem-Pole |
|
Maximum High Level Output Current | -2 A |
|
Core Part Number | TLP250H |
|
Direction Type | Uni-Directional |
Description | Value |
---|---|
ECCN: | EAR99 |
SCHEDULE B: | 8541408000 |
HTSN: | 8541408000 |