SCT3060ALGC11 by Rohm Silicon Carbide (SiC) MOSFETs & Modules | Avnet Asia Pacific

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SCT3060ALGC11

Transistor MOSFET N-CH 650V 39A 3-Pin TO-247N Tube

SCT3060ALGC11 in Silicon Carbide (SiC) MOSFETs & Modules by Rohm
Rohm
Manufacturer: Rohm
Avnet Manufacturer Part #: SCT3060ALGC11
RoHS 6 Compliant

Transistor MOSFET N-CH 650V 39A 3-Pin TO-247N Tube

Technical Attributes

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Description Value
Gate Source Threshold Voltage Max 5.6
No. of Pins 3
Transistor Case Style TO-247N
Mosfet Module Configuration Single
Channel Type N Channel
Power Dissipation 165
Continuous Drain Current Id 39
Drain Source Voltage Vds 650
Rds(on) Test Voltage 18
Operating Temperature Max 175 °C
Drain Source On State Resistance 78

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
SCHEDULE B: 8541290080
HTSN: 8541290095
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