PS2561DL-1Y-F3-A/W by Renesas Electronics Transistor & Photovoltaic Output PhotoCouplers | Avnet Asia Pacific

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PS2561DL-1Y-F3-A/W

Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin DIP SMD Embossed T/R

PS2561DL-1Y-F3-A/W in Transistor & Photovoltaic Output PhotoCouplers by Renesas Electronics
Renesas Electronics
Manufacturer: Renesas Electronics
Product Category: Optoelectronics, OptoCouplers, Transistor & Photovoltaic Output PhotoCouplers
Avnet Manufacturer Part #: PS2561DL-1Y-F3-A/W
Datasheet
PS2561DL-1Y-F3-A/W
RoHS 10 Compliant

The PS2561D-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.The PS2561D-1 is in a plastic DIP (Dual In-line Package) and the PS2561DL-1 is lead bending type (Gull-wing) for surface mount.The PS2561DL1-1 is lead bending type for long creepage distance.The PS2561DL2-1 is lead bending type for long creepage distance (Gull-wing) for surface mount.

Key Features

  • Operating ambient temperature: 110°C
  • High Isolation voltage (BV = 5 000 Vr.m.s.)
  • High collector to emitter voltage (VCEO = 80 V)
  • High current transfer ratio (CTR = 160% TYP.)
  • High-speed switching (tr = 3 μs TYP., tf = 5 μs TYP.)
  • Ordering number of taping product: PS2561DL-1-F3 : 2 000 pcs/reel, : PS2561DL2-1-E3: 1 000 pcs/reel
  • Pb-Free product
  • Safety standards
    • UL approved: No. E72422
    • CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
    • BSI approved: No. 7112/7420
    • SEMKO approved: No. 903238
    • NEMKO approved: No. P09210868
    • DEMKO approved: No. 314999
    • FIMKO approved: No. FI 25119
    • DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40008862 (Option)

Technical Attributes

Find Similar Parts
Description Value
Output Device Transistor
Output Type DC
Lead Finish Tin-Bismuth
Pin Count 4
Operating Temperature -55 to 110 °C
Supplier Package DIP SMD
Maximum Collector Current 50 mA
Input Current 40 mA
Channel Type N
Product Dimensions 4.6 x 6.5 x 3.5
Maximum Current Transfer Ratio @ Current 260@5mA %
Minimum Isolation Voltage 5000 Vrms
Maximum Collector Emitter Voltage 80 V
Mounting Surface Mount
Number of Channels per Chip 1
Input Type DC
Maximum Collector Emitter Saturation Voltage 300 mV
Maximum Power Dissipation 150 mW
Max Processing Temp 260

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
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