AT45DB641E-MWHN-T by Renesas Electronics Flash Memory | Avnet Asia Pacific

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AT45DB641E-MWHN-T

Flash Serial-SPI 1.8V/2.5V/3.3V 64Mbit 64M x 1bit 8-Pin VDFN EP T/R

AT45DB641E-MWHN-T in Flash Memory by Renesas Electronics
Renesas Electronics
Manufacturer: Renesas Electronics
Product Category: Memory, Flash Memory
Avnet Manufacturer Part #: AT45DB641E-MWHN-T
RoHS 10 Compliant

The AT45DB641E is a 1.7V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety ofdigital voice, image, program code, and data storage applications. The AT45DB641E also supports the RapidS serialinterface for applications requiring very high speed operation. Its 69,206,016 bits of memory are organized as 32,768pages of 256 bytes or 264 bytes each. In addition to the main memory, the AT45DB641E also contains two SRAMbuffers of 256/264 bytes each. Interleaving between both buffers can dramatically increase a system's ability to write acontinuous data stream. In addition, the SRAM buffers can be used as additional system scratch pad memory, and E2PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-writeoperation.Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, theDataFlash uses a serial interface to sequentially access its data. The simple sequential access dramatically reducesactive pin count, facilitates simplified hardware layout, increases system reliability, minimizes switching noise, andreduces package size. The device is optimized for use in many commercial and industrial applications wherehigh-density, low-pin count, low-voltage, and low-power are essential.To allow for simple in-system re-programmability, the AT45DB641E does not require high input voltages forprogramming. The device operates from a single 1.7V to 3.6V power supply for the erase and program and readoperations. The AT45DB641E is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface consistingof the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).All programming and erase cycles are self-timed.

Key Features

  • Single 1.7V - 3.6V supply
  • Serial Peripheral Interface (SPI) compatible
  • Supports SPI modes 0 and 3
  • Supports RapidS™ operation
  • Continuous read capability through entire array
  • Up to 85MHz
  • Low-power read option up to 15MHz
  • Clock-to-output time (tV) of 8ns maximum
  • User configurable page size
  • 256 bytes per page
  • 264 bytes per page (default)
  • Page size can be factory pre-configured for 256 bytes
  • Two fully independent SRAM data buffers (256/264 bytes)
  • Allows receiving data while reprogramming the main memory array
  • Flexible programming options
  • Byte/Page Program (1 to 256/264 bytes) directly into main memory
  • Buffer Write | Buffer to Main Memory Page Program
  • Flexible erase options
  • Page Erase (256/264 bytes)
  • Block Erase (2KB)
  • Sector Erase (256KB)
  • Chip Erase (64-Mbits)
  • Program and Erase Suspend/Resume
  • Advanced hardware and software data protection features
  • Individual sector protection
  • Individual sector lockdown to make any sector permanently read-only
  • 128-byte, One-Time Programmable (OTP) Security Register
  • 64 bytes factory programmed with a unique identifier
  • 64 bytes user programmable
  • Hardware and software controlled reset options
  • JEDEC Standard Manufacturer and Device ID Read
  • Low-power dissipation
  • 400nA Ultra-Deep Power-Down current (typical)
  • 5µA Deep Power-Down current (typical)
  • 25µA Standby current (typical)
  • 11mA Active Read current (typical at 20MHz)
  • Endurance: 100,000 program/erase cycles per page minimum
  • Data retention: 20 years
  • Complies with full industrial temperature range
  • Green (Pb/Halide-free/RoHS compliant) packaging options
  • 8-lead SOIC (0.208" wide)
  • 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
  • 8-pad Very-thin DFN (6 x 8 x 1.0mm)
  • 9-ball BGA (6mm x 6mm package, 3 x 3 ball array)
  • 44-ball dBGA (3.5 x 4.2mm package, 6 x 8 modified ball array)
  • Die in Wafer Form

Technical Attributes

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Description Value
Access Time 7 ns
Supply Voltage Nom 3, 2.5 V
Memory Configuration 8M x 8bit
IC Case / Package VDFN
Interfaces SPI
Product Range 1.8V, 3V Serial NOR Flash Memories
Flash Memory Type Serial NOR
IC Mounting Surface Mount
No. of Pins 8
Operating Temperature Min -40 °C
Clock Frequency Max 85 MHz
Memory Density 64 Mbit
Supply Voltage Max 3.6 V
Supply Voltage Min 1.7 V
Operating Temperature Max 85 °C

ECCN / UNSPSC / COO

Description Value
ECCN: 3A991.b.1.a
SCHEDULE B: 8542320050
HTSN: 8542320051
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