SGL-0622Z by Qorvo RF Amplifier ICs | Avnet Asia Pacific

Inactivity Warning Dialog

Your session is about to timeout due to inactivity. Click OK to extend your time for an additional 30 minutes.

SGL-0622Z

Low Noise SiGe HBT MMIC Amplifier, 5 MHz to 4 GHz, 8 Pins, DFN-EP

SGL-0622Z in RF Amplifier ICs by Qorvo
Qorvo
Manufacturer: Qorvo
Avnet Manufacturer Part #: SGL0622Z
RoHS 10 Compliant

The SGL0622Z is a low noise, high gain MMIC LNA designed for low power single-supply operation from +2.7 V to +3.6 V. It’s Class-2 ESD protection and high input overdrive capability ensures rugged performance, while its integrated active bias circuit maintains robust stable bias over temperature and process beta variation. The SGL0622Z is internally matched from 5 MHz to 4000 MHz and requires only 4 to 5 external biasing components (DC blocks, bypass caps, inductive choke). The SGL0622Z is fabricated using highly repeatable Silicon Germanium technology and is housed in a cost effective RoHS/WEEE compliant 2 x 2 mm DFN package.

Key Features

  • High Gain, 28.6 dB at 1575 MHz
  • Low Noise Figure, 1.4 dB at 1575 MHz
  • Low Power Consumption 10.5 mA at +3.3 V
  • Battery Operation:+2.7 V to +3.6 V (Active Bias)
  • Fully Integrated Matching
  • Class 2 ESD Protection (>2000 V HBM)

Technical Attributes

Find Similar Parts
Description Value
No. of Pins 8
IC Case / Package DFN-EP
Power Supply Type Single
Manufacturer Type Low Noise Amplifier
Maximum Reverse Isolation 28@4000 dB
Maximum Output Return Loss 22@3500 dB
Frequency Response RF Min 5 MHz
RF Primary Function Low Noise SiGe HBT MMIC Amplifier
Gain Typ 16.5 dB
Frequency Response RF Max 4 GHz
Operating Temperature Max 105 °C
Supply Voltage Min 2.7 V
No. of Channels 1
Number of Channels per Chip 1
Operating Temperature Min -40 °C
Supply Voltage Max 3.6 V
Operating Supply Voltage 3.45 V

ECCN / UNSPSC / COO

Description Value
ECCN: 5A991.g
CLEAR ALL Compare (0/10)