SBC847BPDW1T3G by onsemi Bipolar Transistor Arrays | Avnet Asia Pacific

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SBC847BPDW1T3G

Bipolar Transistor Array, Complementary NPN and PNP, 45 V, 45 V, 100 mA, 100 mA, 380 mW

SBC847BPDW1T3G in Bipolar Transistor Arrays by onsemi
onsemi
Manufacturer: onsemi
Avnet Manufacturer Part #: SBC847BPDW1T3G
RoHS 10 Compliant

The Dual NPN PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is designed for low power surface mount applications.

Key Features

  • Collector − Emitter Breakdown Voltage 45 V
  • Pb−Free Devices are available

Technical Attributes

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Description Value
MSL Level MSL 1 - Unlimited
Operating Temperature Max 150
Transition Frequency PNP 100
Transistor Polarity Complementary
Collector Emitter Voltage PNP Max 45
Transition Frequency NPN 100
Continuous Collector Current PNP 100
No. of Pins 6
Transistor Mounting Surface Mount
DC Current Gain hFE Min PNP 200
Power Dissipation NPN 380
Transistor Case Style SOT-363
DC Current Gain hFE Min NPN 200
Collector Emitter Voltage NPN Max 45
Continuous Collector Current NPN 100
Product Range BC847BPDW1 Ser

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
SCHEDULE B: 8541210080
HTSN: 8541210095
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