Manufacturer:
onsemi
NVMFD5C680NLT1G
MOSFET Array, Dual N Channel, 60 V, 20 A, 28 Milliohms, DFN, 8 Pin
Avnet Manufacturer Part #:
NVMFD5C680NLT1G
RoHS 10 Exempt
NVMFD5C680NLT1G is a dual N-channel power MOSFET. It has low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses.
Key Features
- AEC-Q101 qualified and PPAP capable
- Drain-to-source breakdown voltage is 60V minimum at (VGS = 0V, ID = 250µA)
- Gate-to-source leakage current is 100nA maximum at (VDS = 0V, VGS = 20V)
- Negative threshold temperature coefficient is -4.3mV/°C typical at (TJ = 25°C)
- Drain-to-source on resistance is 23mohm typical at (VGS = 10V, ID = 5A)
- Input capacitance is 350pF typical at (VGS = 0V, f = 1MHz, VDS = 25V)
- Gate-to-drain charge is 0.8nC typical at (VGS = 4.5V, VDS = 48V; ID = 10A)
- Turn-on delay time is 6.4ns typical at (VGS = 4.5V, VDS = 48V, ID = 10A, RG = 1ohm)
- Rise time is 25ns typical at (VGS = 4.5V, VDS = 48V, ID = 10A, RG = 1ohm)
- Junction temperature range from -55°C to +175°C, DFN8 package
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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Power Dissipation N Channel | 24 W |
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Drain Source Voltage Vds N Channel | 60 V |
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Operating Temperature Max | 175 °C |
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Drain Source On State Resistance N Channel | 28 mOhm |
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No. of Pins | 8 |
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Transistor Case Style | DFN |
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Continuous Drain Current Id N Channel | 20 A |
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Qualification | AEC-Q101 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | PARTS... |
| HTSN: | PARTS... |