Manufacturer:
onsemi
NTH4L045N065SC1
Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TO-247-4L
Avnet Manufacturer Part #:
NTH4L045N065SC1
RoHS 6 Compliant
Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TO-247-4L
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
|
|
Power Dissipation | 187 |
|
|
Transistor Case Style | TO-247 |
|
|
Drain Source Voltage Vds | 650 |
|
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Drain Source On State Resistance | 50 |
|
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Continuous Drain Current Id | 55 |
|
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Rds(on) Test Voltage | 18 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |