NTH4L014N120M3P by onsemi Silicon Carbide (SiC) MOSFETs & Modules | Avnet Asia Pacific

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NTH4L014N120M3P

Silicon Carbide (SiC) MOSFET – EliteSiC, 14mohm, 1200V, M3P, TO-247-4L

NTH4L014N120M3P in Silicon Carbide (SiC) MOSFETs & Modules by onsemi
onsemi
Manufacturer: onsemi
Avnet Manufacturer Part #: NTH4L014N120M3P
RoHS 6 Compliant

Silicon Carbide (SiC) MOSFET – EliteSiC, 14mohm, 1200V, M3P, TO-247-4L

Technical Attributes

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Description Value
Drain Source On State Resistance 20@18V
Continuous Drain Current Id 127
Drain Source Voltage Vds 1200
No. of Pins 4
Operating Temperature Max |||
Power Dissipation 686

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
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