Manufacturer:
onsemi
NTF2955T1G
Power MOSFET, P Channel, 60 V, 2.6 A, 185 Milliohms, SOT-223 (TO-261), 4 Pins, Surface Mount
Avnet Manufacturer Part #:
NTF2955T1G
RoHS 10 Exempt
NTF2955T1G is a single, P-channel power MOSFET. The applications include power supplies, PWM motor control, converters, and power management.
Key Features
- Drain-to-source on resistance is 145mohm typ (VGS = -10V, ID = -0.75A)
- Gate-to-source voltage is ±20V (TJ = 25°C)
- Continuous drain current is -2.6A (TJ = 25°C, steady state)
- Power dissipation is 2.3W (TJ = 25°C, steady state)
- Pulsed drain current is -17A (tp = 10µs, TJ = 25°C)
- Drain-to-source breakdown voltage is -60V min (VGS = 0V, ID = -250µA, TJ=25°C)
- Gate threshold voltage range from -2.0 to -4.0V (VGS = VDS, ID = -1.0mA, TJ=25°C)
- Forward transconductance is 1.77S typ (VGS = -15V, ID = -0.75A, TJ=25°C)
- Turn-on delay time is 11ns rtp (VGS = 10V, VDD = 25V, ID = 1.5A, RG = 9.1ohm, RL = 25ohm)
- SOT-223 package, operating junction range from -55 to 175°C
Technical Attributes
Find Similar Parts|
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Description | Value |
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Rds(on) Test Voltage | 10 |
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Transistor Case Style | SOT-223 |
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Channel Type | P Channel |
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Drain Source On State Resistance | 154 mOhm |
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Transistor Mounting | Surface Mount |
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No. of Pins | 4 |
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Operating Temperature Max | 175 °C |
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Continuous Drain Current Id | 2.6 A |
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Power Dissipation | 2.3 W |
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Drain Source Voltage Vds | 60 V |
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Gate Source Threshold Voltage Max | 4 V |
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MSL Level | MSL 1 - Unlimited |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | PARTS... |
| HTSN: | PARTS... |
Documents
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Documents
| Title | Download | Type | Date Published |
|---|---|---|---|
| ON-PB21344X PCN | EOL-Documentation | 20160109 | |
| ON-PB21344X PCN | Other-Documents | 20160109 |