Manufacturer:
onsemi
NTBG020N120SC1
Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L
Avnet Manufacturer Part #:
NTBG020N120SC1
RoHS 6 Compliant
Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
|
|
Drain Source Voltage Vds | 1.2 |
|
|
Power Dissipation | 468 |
|
|
Drain Source On State Resistance | 28 |
|
|
Rds(on) Test Voltage | 20 |
|
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Continuous Drain Current Id | 98 |
|
|
Gate Source Threshold Voltage Max | 4.3 |
|
|
Transistor Case Style | TO-263 (D2PAK) |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |