Manufacturer:
onsemi
NSV60600MZ4T1G
Trans GP BJT PNP 60V 6A 4-Pin(3+Tab) SOT-223 T/R
Avnet Manufacturer Part #:
NSV60600MZ4T1G
RoHS 10 Exempt
The combination of low saturation voltage and high gain makes this Bipolar Transistor an ideal device for high speed switching applications where power saving is a concern.
Key Features
- Low Collector-Emitter Saturation Voltage
- High DC Current Gain
- High Current-Gain Bandwidth Product
- Superior gain linearity
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
- These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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Power Dissipation | 2 |
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Transition Frequency | 100 |
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Collector Emitter Voltage Max | 60 |
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Transistor Mounting | Surface Mount |
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Transistor Polarity | PNP |
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Continuous Collector Current | 6 |
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No. of Pins | 4 |
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Operating Temperature Max | 150 |
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MSL Level | MSL 1 - Unlimited |
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DC Current Gain hFE Min | 150 |
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Transistor Case Style | SOT-223 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8542390000 |
| HTSN: | 8542390001 |
Documents
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Documents
| Title | Download | Type | Date Published |
|---|---|---|---|
| ON-PB21344X PCN | EOL-Documentation | 20160109 | |
| ON-PB21344X PCN | Other-Documents | 20160109 |