NCP51820AMNTWG

The NCP51820 high−speed, gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode), high electron mobility transistor (HEMT) and gate injection transistor (GIT), gallium nitrade (GaN) power switches in off−line, half−bridge power topologies. The NCP51820 offers short and matched propagation delays with advanced level shift technology providing −3.5 V to +650 V (typical) common mode voltage range for the high−side drive and −3.5 V to +3.5 V common mode voltage range for the low−side drive. In addition, the device provides stable dV/dt operation rated up to 200 V/ns for both driver output stages in high speed switching applications. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate−source drive signal amplitude. The circuit actively regulates the driver’s bias rails and thus protects against potential gate−source over−voltage under various operating conditions. The NCP51820 offers important protection functions such as independent under−voltage lockout (UVLO), monitoring VDD bias voltage and VDDH and VDDL driver bias and thermal shutdown based on die junction temperature of the device. Programmable dead−time control can be configured to prevent cross−conduction.