Manufacturer:
onsemi
NCP5104DR2G
IGBT/MOSFET Driver, 2 Channels, High Side and Low Side, 500 mA, 10 V to 20 V, 100 ns, 8 Pins, NSOIC
Avnet Manufacturer Part #:
NCP5104DR2G
RoHS 10 Compliant
The NCP5104DR2G is a high voltage Power Gate Driver providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration. It uses the bootstrap technique to insure a proper drive of the high-side power switch.
Key Features
- High and low drive outputs
- Up to VCC swing on input pins
- Extended allowable negative bridge pin voltage swing to -10V for signal propagation
- Matched propagation delays between both channels
- 1 Input with internal fixed dead time (520ns)
- Under VCC lockout (UVLO) for both channels
- Pin-to-Pin-compatible with industry standards
- Rugged and flexible design
- Robust design
- Low level input for micro-controller operation
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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No. of Pins | 8 |
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Product Range | NCP5104 Series |
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Operating Temperature Min | -40 °C |
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IC Case / Package | NSOIC |
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Input Delay | 620 ns |
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IC Mounting | Surface Mount |
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Output Delay | 100 ns |
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Driver Configuration | High Side and Low Side, Low Sid |
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Supply Voltage Min | 10 V |
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Gate Driver Type | Isolated |
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Source Current | 250 mA |
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Sink Current | 500 mA |
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Power Switch Type | IGBT, MOSFET, Mosfet |
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No. of Channels | 2 |
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Input Type | Logic |
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Supply Voltage Max | 20 V |
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Operating Temperature Max | 125 °C |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
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