NCD57001DWR2G
Isolated high current and high efficiency SiC/MOSFET/IGBT gate driver with internal galvanic isolation
NCD57001 is a high-current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn-off at DESAT. NCD57001 accommodates both 5 V and 3.3 V signals on the input side and wide bias voltage range on the driver side including negative voltage capability.
- High Current Output (+4/-6 A) at IGBT Miller Plateau Voltages
- Low Output Impedance for Enhanced IGBT Driving
- Short Propagation Delays with Accurate Matching
- Active Miller Clamp to Prevent Spurious Gate Turn-on
- DESAT Protection with Programmable Delay
- Negative Voltage (Down to -9 V) Capability for DESAT
- Soft Turn Off During IGBT Short Circuit
- IGBT Gate Clamping During Short Circuit
- IGBT Gate Active Pull Down
- Tight UVLO Thresholds for Bias Flexibility
Technical Attributes
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| Description | Value | |
|---|---|---|
| High Side and Low Side, Low Sid | ||
| High and Low Side | ||
| Galvanically Isolated | ||
| 60 ns | ||
| Inverting, Non-Inverting, Non-Inv | ||
| Surface Mount | ||
| MSL 1 - Unlimited | ||
| 1 | ||
| 16 | ||
| 1 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 66 ns | ||
| 16SOIC | ||
| 7.8 A | ||
| 16 | ||
| Automotive | ||
| 7.1 A | ||
| 7.8 A | ||
| SOIC | ||
| 5 V | ||
| 3.3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8542390001 |
| Schedule B: | 8542390000 |
Factory Lead Time: