MMBTH10-4LT1G by onsemi RF Bipolar Transistors | Avnet Asia Pacific

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MMBTH10-4LT1G

Bipolar - RF Transistor, NPN, 25 V, 800 MHz, 225 mW, 999 A, SOT-23

MMBTH10-4LT1G in RF Bipolar Transistors by onsemi
onsemi
Manufacturer: onsemi
Avnet Manufacturer Part #: MMBTH10-4LT1G
RoHS 10 Compliant
NCNR

This NPN Bipolar Transistor is designed for general purpose VHF/UHF applications and is housed in the SOT-23 surface mount package. This device is ideal for low-power surface mount applications.

Key Features

  • Low rDS(on) Provides Higher Efficiency and Extends Battery Life
  • Miniature SOT-23 Surface Mount Package Saves Board Space
  • Pb-Free Package are Available. The G-Suffix Denotes a Pb-Free Lead Finish

Technical Attributes

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Description Value
Transistor Case Style SOT-23
No. of Pins 3
MSL Level MSL 1 - Unlimited
Collector Emitter Voltage Max 25
Power Dissipation 225
DC Current Gain hFE Min 120
Transition Frequency 800
Transistor Mounting Surface Mount
Operating Temperature Max 150
Transistor Polarity NPN

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
SCHEDULE B: 8541210080
HTSN: 8541210095
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