MMBT3906LT1G by onsemi Single Bipolar Transistors | Avnet Asia Pacific

Inactivity Warning Dialog

Your session is about to timeout due to inactivity. Click OK to extend your time for an additional 30 minutes.

MMBT3906LT1G

Single Bipolar Transistor, PNP, 40 V, 200 mA, 225 mW, SOT-23 (TO-236), 3 Pins, Surface Mount

MMBT3906LT1G in Single Bipolar Transistors by onsemi
onsemi
Manufacturer: onsemi
Avnet Manufacturer Part #: MMBT3906LT1G
RoHS 10 Compliant

MMBT3906LT1G is a PNP silicon general purpose transistor in a 3 pin SOT-23 package.

Key Features

  • Collector-emitter voltage is -40VDC
  • Collector-base voltage is -40VDC
  • Collector current - continuous is -200mA DC
  • Total device dissipation is a 225mW
  • Junction and storage temperature is -65 to +150°C
  • 60 minimum DC current gain (IC = -0.1mAdc, VCE = -1.0Vdc)
  • 250MHz typical current-gain bandwidth product (IC = -10mAdc, VCE = -20Vdc, f = 100MHz)

Technical Attributes

Find Similar Parts
Description Value
No. of Pins 3
Continuous Collector Current 200 mA
Transistor Polarity PNP
Operating Temperature Max 150 °C
Transistor Case Style SOT-23
DC Current Gain hFE Min 100
MSL Level MSL 1 - Unlimited
Product Range MMBTxxxx Series
Collector Emitter Voltage Max 40 V
Transition Frequency 250 MHz
Power Dissipation 225 mW
Transistor Mounting Surface Mount

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
SCHEDULE B: PARTS...
HTSN: PARTS...
CLEAR ALL Compare (0/10)