MMBT3904LT1G by onsemi Single Bipolar Transistors | Avnet Asia Pacific

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MMBT3904LT1G

Single Bipolar Transistor, NPN, 40 V, 200 mA, 225 mW, SOT-23 (TO-236), 3 Pins, Surface Mount

MMBT3904LT1G in Single Bipolar Transistors by onsemi
onsemi
Manufacturer: onsemi
Avnet Manufacturer Part #: MMBT3904LT1G
RoHS 10 Compliant
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MMBT3904LT1G is a NPN silicon, surface mount, general purpose transistor.

Key Features

  • Collector-emitter breakdown voltage is 40VDC min (TA = 25°C, IC = 1.0mAdc, IB = 0)
  • Collector-base breakdown voltage is 60VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C)
  • Emitter-base breakdown voltage is 6.0VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C)
  • Collector current - continuous is 900mAdc max (TA = 25°C)
  • Total Device Dissipation FR-5 Board is 225mW max (TA = 25°C)
  • Thermal resistance junction-to-ambient is 556°C/W max (TA = 25°C)
  • Collector cutoff current is 50nAdc max (VCE = 30VDC, VEB = 3.0Vdc)
  • Noise figure is 5.0dB max (VCE = 5.0VDC, IC = 100µADC, RS = 1.0kohm, f = 1.0KHz)
  • SOT-416 package
  • Junction temperature range from -65 to +150°C

Technical Attributes

Find Similar Parts
Description Value
Transistor Case Style SOT-23
Operating Temperature Max 150 °C
Transistor Polarity NPN
Transistor Mounting Surface Mount
No. of Pins 3
Collector Emitter Voltage Max 40 V
Transition Frequency 300 MHz
Continuous Collector Current 200 mA
Product Range MMBT3904L Series
MSL Level MSL 1 - Unlimited
Power Dissipation 225 mW
DC Current Gain hFE Min 100

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
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