MBT3906DW1T1G by onsemi Bipolar Transistor Arrays | Avnet Asia Pacific

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MBT3906DW1T1G

Bipolar Transistor Array, Dual PNP, 40 V, 200 mA, 150 mW, 100 hFE, SOT-363, 6 Pins

MBT3906DW1T1G in Bipolar Transistor Arrays by onsemi
onsemi
Manufacturer: onsemi
Avnet Manufacturer Part #: MBT3906DW1T1G
RoHS 10 Compliant
Tape & Reel

The Dual PNP Bipolar Transistor is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium.

Key Features

  • hFE, 100-300
  • Low VCE(sat), ≤ 0.4 V
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • Available in 8 mm, 7-inch/3,000 Unit Tape and Reel
  • Device Marking: MBT3906DW1T1 = A2
  • Pb-Free Package is Available
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Technical Attributes

Find Similar Parts
Description Value
Transistor Mounting Surface Mount
No. of Pins 6
Operating Temperature Max 150 °C
Transistor Case Style SOT-363
DC Current Gain hFE Min 100@10mA@1V
MSL Level MSL 1 - Unlimited
Transistor Polarity NPN
Collector Emitter Voltage Max 40
Continuous Collector Current 200

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
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