Manufacturer:
onsemi
Inactivity Warning Dialog
The FOD817 series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. The FOD817B300 is a 1-channel 4-pin high operating temperature Phototransistor Optocoupler consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor. It is suitable for digital logic input and microprocessor input.
Key Features
|
Description | Value |
---|---|---|
|
Input Current | 50 mA |
|
Maximum Collector Emitter Saturation Voltage | 200 mV |
|
Maximum Collector Current | 50 mA |
|
Mounting | Through Hole |
|
Minimum Isolation Voltage | 5000 Vrms |
|
Channel Type | N |
|
Pin Count | 4 |
|
Supplier Package | PDIP |
|
Fall Time | 3 us |
|
Forward Voltage | 1.2 V |
|
Maximum Rise Time | 18 us |
|
Maximum Fall Time | 18 us |
|
Maximum Power Dissipation | 200 mW |
|
Lead Finish | Matte Tin |
|
Product Dimensions | 4.6 x 6.5 x 3.5 mm |
|
Input Type | DC |
|
Max Processing Temp | 260 °C |
|
Reverse Voltage | 6 V |
|
Number of Channels per Chip | 1 |
|
Output Type | DC |
|
Maximum Collector Emitter Voltage | 70 V |
|
Series Name | FOD817 |
|
Operating Temperature | -55 to 110 to 110 °C |
|
Typical Rise Time | 4 us |
|
Maximum Current Transfer Ratio @ Current | 260@5mA % |
Description | Value |
---|---|
ECCN: | EAR99 |
SCHEDULE B: | 8541408000 |
HTSN: | 8541408000 |
Documents
Title | Download | Type | Date Published |
---|---|---|---|
FOD817B300 4LD,MDIP,.300",WIDE,OPTO | Part-Block-Diagram | 20040524 |