Manufacturer:
onsemi
FDS4465
Power MOSFET, P Channel, 20 V, 13.5 A, 0.0067 ohm, SOIC, Surface Mount
Avnet Manufacturer Part #:
FDS4465
RoHS 10 Compliant
NCNR
The FDS4465 is a P-channel MOSFET produced using rugged gate version of advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8 to 8V). It is suitable for load switch and battery protection application.
Key Features
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- High current and power handling capability
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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Power Dissipation | 2.5 W |
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Rds(on) Test Voltage | 4.5 |
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Continuous Drain Current Id | 13.5 A |
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Drain Source On State Resistance | 8.5 mOhm |
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No. of Pins | 8 |
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Channel Type | P Channel |
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Transistor Case Style | SOIC |
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Transistor Mounting | Surface Mount |
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Product Range | PowerTrench Series |
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Gate Source Threshold Voltage Max | 1.5 V |
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Drain Source Voltage Vds | 20 V |
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MSL Level | MSL 1 - Unlimited |
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Operating Temperature Max | 175 °C |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541290080 |
| HTSN: | 8541290095 |
Documents
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Documents
| Title | Download | Type | Date Published |
|---|---|---|---|
| FDS4465 8LD, JEDEC MS-012, .150"NARROW BODY | Part-Block-Diagram | 20001211 |