Manufacturer:
onsemi
BSS84
Power MOSFET, P Channel, 50 V, 130 mA, 10 Ohm, SOT-23 (TO-236), 3 Pins, Surface Mount
Avnet Manufacturer Part #:
BSS84
RoHS 10 Compliant
The BSS84 is a P-Channel Enhancement Mode Field Effect Transistor This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
Key Features
- BSS84:-0.13 A, -50 V. RDS(ON) = 10 Ω @ VGS = -5 V
- Voltage-controlled P-channel small signal switch
- High-Density Cell Design for Low RDS(ON)
- High Saturation Current.
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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Channel Type | P Channel |
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Drain Source Voltage Vds | 50 V |
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No. of Pins | 3 |
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Transistor Mounting | Surface Mount |
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Transistor Case Style | SOT-23 |
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Operating Temperature Max | 150 °C |
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Power Dissipation | 360 mW |
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Gate Source Threshold Voltage Max | 2 V |
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MSL Level | MSL 1 - Unlimited |
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Drain Source On State Resistance | 10 Ohm |
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Continuous Drain Current Id | 130 mA |
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Rds(on) Test Voltage | 5 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541210080 |
| HTSN: | 8541210095 |
Documents
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Documents
| Title | Download | Type | Date Published |
|---|---|---|---|
| BSS84 3LD, SOT23, JEDEC TO-236, LOW PROFILE | Part-Block-Diagram | 19950609 | |
| FAI-P5CAAA PCN | EOL-Documentation | 20160109 |